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发明名称
CRYSTAL GROWTH METHOD
摘要
<p>PURPOSE:To contact the saturated solution of a compound semiconductor with seed crystal then anneal the same from the seed crystal side, thereby continuously and largely growing nearly perfect thin-plate-form crystal.</p>
申请公布号
JPS5246761(A)
申请公布日期
1977.04.13
申请号
JP19750122665
申请日期
1975.10.09
申请人
MATSUSHITA ELECTRIC IND CO LTD
发明人
ARIGA KOUZOU
分类号
C30B11/00;C30B29/40;H01L21/208;H01L33/30
主分类号
C30B11/00
代理机构
代理人
主权项
地址
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