| 发明名称 |
Method and means for passivation and isolation in semiconductor devices |
| 摘要 |
The use of ion implantation to produce low concentrations of chromium, oxygen or iron in a gallium arsenide junction type semiconductor, utilizing the accompanying low resistivity to provide an improved device.
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| 申请公布号 |
US4017887(A) |
申请公布日期 |
1977.04.12 |
| 申请号 |
US19740535062 |
申请日期 |
1974.12.20 |
| 申请人 |
THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE AIR FORCE |
发明人 |
DAVIES, D. EIRUG;ROOSILD, SVEN A.;DOLAN, JR., RUSSELL P. |
| 分类号 |
H01L21/263;H01L21/265;H01L29/207;(IPC1-7):H01L29/34;H01L27/04;H01L29/16 |
主分类号 |
H01L21/263 |
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