发明名称 |
Non-volatile metal nitride oxide semiconductor device |
摘要 |
A metal nitride oxide semiconductor device capable of use within a memory cell, having a more heavily doped region of the same type as the substrate provided directly under the channel of the depletion mode device. Application of a positive write voltage to the gate of the device, with the substrate at 0 volts potential and the source and drain biased to a suitable positive level, results in avalanche operation of the device whereby charge is stored in a nitride oxide interface under the gate, thereby converting the device to enhancement mode operation. The charge can be removed with the source and drain biased to the 0 volt potential of the substrate and a positive erase signal applied to the gate. A four device memory cell is disclosed.
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申请公布号 |
US4017888(A) |
申请公布日期 |
1977.04.12 |
申请号 |
US19750645770 |
申请日期 |
1975.12.31 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHRISTIE, KENNETH HOWARD;DEWITT, DAVID;JOHNSON, WILLIAM STANFORD |
分类号 |
H01L21/8247;G11C16/04;H01L21/336;H01L27/088;H01L29/10;H01L29/78;H01L29/788;H01L29/792;(IPC1-7):H01L29/34;H01L29/00;G11B13/00 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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