Thin film HF capacitor prodn. using sputtering - with aluminium tantalum alloy for base electrode, then forming dielectric film in reactive gas

摘要

Prodn. of a thin film condenser, esp. for h.f. involves sputtering an insulating substrate with an Al-Ta alloy, contg. 3-18, esp. 7-14 atom-% Ta, as base electrode, and then sputtering with a second Al-Ta alloy film, using a reactive gas, without interrupting the sputtering process, and forming. A CrNi and then a Au film are then evapd. onto this dielectric film as second electrode. The improvement comprises reactive sputtering of the second film in an atmos. with O2 or CO2 partial pressure of 10-1 to 10-2 Pa. This film pref. is 200 nm thick and is formed at 200 V. The condensers have h.f. properties similar to those of Al-Ta thin film condensers produced by non-reactive sputtering, e.g. in Ar, but can be produced without interrupting the sputtering process.