| 摘要 |
<p>1468680 Field effect semi-conductor device STANDARD TELEPHONES & CABLES Ltd 13 Feb 1975 [6 Dec 1973] 56518/73 Heading H1K A field effect device includes electrophoretically deposited semi-conductor material 4, e.g. Se or Te, on an electrically conductive baseplate 1, a pair of current electrodes 7, 8 and a control electrode 9 insulated from the semiconductor 4 by an insulating film 6. As shown, one of a number of identical devices is made over a dimpled or corrugated portion of the plate 1, which may be of Al. Strips 2 of insulating material are formed, e.g. by anodization of the Al, and a layer 3 of nickel selenide is flashed on to the plate 1. The semi-conductor body 4 receives a coating 5 of cadmium selenide and is then lapped and polished to expose the Se or Te which then receives the insulating gate 6 of silicon nitride and electrodes 6-8. The plate is then sub-divided.</p> |
