| 摘要 |
1468746 Photo-resist materials ENERGY CONVERSION DEVICES Inc 10 April 1974 [12 April 1973] 15946/74 Heading G2C A photo-resist material comprises a transparent support having on both sides an opaque layer preferably of Te or a composition containing at least 50 per cent Te and a negative- or positiveworking photo-resist layer on each of the opaque layers; the solvent for the photo-resist layer also being a solvent for the opaque layer. Specified photo-resists are diazonium compounds, azides and quinone diazides and polymers derived from these compounds, bi-chromated colloids, photopolymerizable compositions, salts containing tetraaryl borate anions of Specification 1246298 and Ce and/or Te compositions of Specification 1397566. Other specified opaque layers are Mb, Po, Co, Zn, Al, Cu, Ni, Fe, Sn, V, Ge and Ag. A single developer for photo-resist and opaque layers when they are Te or Te composition, is an alkali metal hypochlorite optionally with a buffering agent, e.g. Na or K bicarbonate; H 2 O 2 ; potassium chlorate, ferric chloride or iodine/KI. In the Example, a polyester support is coated on both sides with a layer of Te and a layer of diazo resin, imagewise exposed on each side to different masters and developed in NaOCl/NaOH solution to produce a microfilm. If the support is thick enough, the images on each side can be read out independently. If positive photo-resists are used, images can subsequently be added on, of also Specification 1468747 in this respect. It is also stated that the photo-resist layers may be permeable to a solvent for the opaque layers and the opaque material leached out through the photoresist. |
