| 摘要 |
PURPOSE:To obtain a high light emission output and facilitate manufacturing with a low cost by providing an active layer and an n-type cladding layer built up on a p-type InP substrate, a p-type electrode and a recessed part on the opposite side of the substrate and a lens fixed to the inside of the recessed part are provided. CONSTITUTION:A p-type InP buffer layer 11, an InGaAsP active layer 12 and an n-type InP cladding layer 13 are successively built up on the rear surface of a p-type InP substrate 10 by epitaxial growth. Then Zn is diffused from the rear surface to form a Zn diffused layer 21 around a center region with a diameter about 30 mum into which Zn is not diffused. The region into which Zn is not diffused functions as a current limiting part 14. On the other hand, on the opposite side surface of the p-type InP substrate 10, a p-type electrode 18 is formed and, at the same time, a recessed part 23 is formed by etching and a spherical lens 24 is fixed to the inside of the recessed part 23 with adhesive. With this light emitting diode, a current can be limited without employing a precision diffusion process and the diode can be manufactured with a low cost. Moreover, the light is hardly absorbed by the substrate so that a high light output can be obtained. |
