发明名称 DEVICE FOR MANUFACTURING SEMICONDUCTOR WAFER
摘要 <p>PURPOSE:To prevent any danger from the leakage of reactive gas from occurring by a method wherein a detection part detecting any change in temperature of chemical reaction heat in a waste gas processor brought about in case of a leakage is mounted on an exhaust channel exhausting the waste gas. CONSTITUTION:An RF power supply 6 is connected to an upper electrode 8 and a lower electrode 3 producing glow discharge plasma in an etching chamber 1. Reactive gas adsorption-processed by adsorbent 11 filled in a waste gas processor 10 is exhausted from an exhaust duct 12 to a main exhaust duct. A temperature sensor 14 detecting reaction heat in case of an external leakage and an alarm 15 raising an alarm conforming to the output from the sensor 14 are mounted on the lower step part of the processor 10. A detecting part 16 detecting any external leakage is composed of the sensor 14 and the alarm 15. Thus, any abnormality in the processor 10 in case of the leakage can be detected earlier. Through these procedures, any danger from the leakage of reactive gas can be prevented from occurring.</p>
申请公布号 JPH01258427(A) 申请公布日期 1989.10.16
申请号 JP19880086683 申请日期 1988.04.08
申请人 NEC CORP 发明人 ITO HIDEO
分类号 B01D53/46;B01D53/34;H01L21/302;H01L21/3065 主分类号 B01D53/46
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