Epoxy composition for encasing semiconductor devices

摘要

An epoxy resin composition for encasing semiconductive devices comprising a homogeneous mixture of a cresol novolak type epoxy resin and phthalic anhydride as a curing agent, the amount of phthalic anhydride being in excess of the equivalents of epoxide groups, a derivative of imidazole as a curing accelerating agent, and remainder being mineral filler.