| 发明名称 |
Uniform thermal migration utilizing noncentro-symmetric and secondary sample rotation |
| 摘要 |
The geometric configuration of a molten zone migrating through a solid body of semiconductor material during thermal gradient zone melting is maintained by simultaneous noncentro-symmetric and secondary rotation of the solid body.
|
| 申请公布号 |
US4012236(A) |
申请公布日期 |
1977.03.15 |
| 申请号 |
US19750645675 |
申请日期 |
1975.12.31 |
| 申请人 |
GENERAL ELECTRIC COMPANY |
发明人 |
ANTHONY, THOMAS R.;CLINE, HARVEY E. |
| 分类号 |
H01L21/208;C30B13/02;H01L21/24;(IPC1-7):H01L21/22 |
主分类号 |
H01L21/208 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
