SEMICONDUCTOR DEVICE

摘要

1455260 Semiconductor devices SONY CORP 20 Dec 1973 [29 Dec 1972] 59089/73 Heading H1K In an NPN transistor 2, 3, 4, Fig. 1, an additional P-type region 200 forms with emitter region 4 a PN junction 14 which is spaced from the base-emitter junction 13 by a distance smaller than the diffusion length of minority carriers in the emitter region, so that, when junction 13 is forwardly biased, the numbers of minority carriers injected into the emitter region 4 from junctions 13 and 14 are substantially equal, resulting in a substantially uniform minority carrier concentration across the emitter regions. As shown, the transistor is formed on a substrate 1 of Si heavily doped with Sb, collector, base, and emitter regions 2, 3, 4 being formed epitaxially, and being lightly doped with Sb, B and Sb respectively. An emitter contact region 5 and a collector lead region 6 are heavily doped with P, being formed by diffusion, as are a base lead region 7, a base contact region 8, and the additional region 200, the dopant being B. A SiO 2 layer 206 for passivation is provided overall. Electrodes 9, 10, 11 are formed of Al. In a further embodiment (Fig. 3, not shown) the NPN transistor of complementary transistors (21, 22) in an I.C. is formed as above except that the collector electrode 9 is provided on an N+ collector contact region (15) at the surface of collector lead region 6. The transistors (21, 22) are isolated by a P-type isolation region (50). In a modification (Fig. 4, not shown) the additional region (201) is a continuation of the base lead region 7, base electrode 10 being formed on the additional region.