发明名称 |
Bipolar transistors using isolated selective doping to improve performance characteristics |
摘要 |
Parts of the emitter and base of a vertical bipolar transistor adjoin a field-isolation region to form a walled-emitter structure. The transistor is furnished with extra doping in the collector and, optionally, in the base. The extra collector doping is provided along collector-base junction below the intrinsic base to create a special collector zone spaced laterally apart from the field-isolation region. The presence of the special collector zone causes the intrinsic base to be thinner, thereby raising the cutoff frequency and overall current gain. The extra base doping is provided in the intrinsic base along the field-isolation region to improve the transistor's breakdown voltage and leakage current characteristics.
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申请公布号 |
US5581115(A) |
申请公布日期 |
1996.12.03 |
申请号 |
US19940319759 |
申请日期 |
1994.10.07 |
申请人 |
NATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
GRUBISICH, MICHAEL J.;BULUCEA, CONSTANTIN |
分类号 |
H01L21/331;H01L29/08;(IPC1-7):H01L27/082;H01L27/102;H01L29/70 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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