| 摘要 |
Immersion of semiconductor devices, particularly diodes, having a defective tin plating thereon in a solution of 5 - 20 percent by weight trichloroacetic acid, 0.1 to 5 percent by weight of a compound selected from the group consisting of cationic, anionic, and nonionic surfactants and the balance water effectively removes the tin therefrom. The process is effective at room temperature but preferably is performed at approximately 100 DEG C.
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