| 摘要 |
PROBLEM TO BE SOLVED: To improve junction reliability with aluminum electrode, especially long-term reliability at high temperatures by containing silver in a particular range and the remainder, using an alloy thin wire for semiconductor element consisting of gold and unavoidable impurities. SOLUTION: This alloy thin wire for semiconductor element contains Ag in the range of 11 to 18.5 wt.%, the remainder comprises gold and unavoidable impurities, and, more preferably, at least one kind of Cu, Pb, and Pt is contained in 0.01 to 40 wt.% in total. When making these gold, silver alloy thin wires, elongation can be improved in addition to the increase in strength in a state where thermal refining and annealing at the final wire diameter are performed by applying heat treatment in the middle of wire drawing process, and dispersion in the loop shape can be reduced. Also, after applying thermal refining and annealing at the final wire diameter, the adhesion of thin wire and with passage of time change or the like in the ambient environment can be restricted by forming a stable oxide film of silver on the surface of thin wire. |
