METHOD OF FORMING BASE ELECTRODE IN BIPOLAR TRANSISTOR,申请号KR19910000647-传众专利搜索

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发明名称	METHOD OF FORMING BASE ELECTRODE IN BIPOLAR TRANSISTOR
摘要
申请公布号	KR0172813(B1)	申请公布日期	1999.02.01
申请号	KR19910000647	申请日期	1991.01.16
申请人	HYUNDAI MICRO ELECTRONICS CO., LTD.	发明人	PARK, SUNG-HWEE;KWANG, YANG-JUNG
分类号	H01L29/00;(IPC1-7):H01L29/00	主分类号	H01L29/00
代理机构		代理人
主权项
地址

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