| 摘要 |
<p>Method of growing a semiconductor compound esp. GaP. in the form of an ingot comprises a reaction synthesis in a sealed chamber by reacting a first volatile component having a vapour pressure at least equal to the dissociation pressure of the cpd., with a second component in the liquid phase in a elongated boat in horizontal position. The closed chamber is heated by radiant heat. The excess of liquid component appearing during the course of the reaction, representing the excess of liquid over the amount of cpd. obtd. is removed continuously during the course of the reaction. The height of the ingot as it grows in the boat remains constant unlike in prior art methods, hence the profile of the temperature gradient does not change during the reaction and the yield is improved.</p> |
