| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a check apparatus and a check method, capable of obtaining the distribution and tendency for the electrical resistance and capacitance of the entire surface of a substrate equipped with fine circuit patterns such as semiconductor devices or liquid crystals in a short time in a process of manufacturing the substrate. SOLUTION: Secondary electrons or back scattering electrons, produced by irradiating a semiconductor wafer 9 as an object of check with a charged particle beam, are introduced into a detector 20 to generate signals proportional to the number of the introduced electrons, and a check image is formed on the basis of these signals. The electrical resistance and capacitance of the surface of the wafer 9 are determined so as to agree with a check image, taking the current value and irradiation energy of the charged particle beam, an electric field, and the emission efficiencies of secondary electrons and back-scattered electrons on the surface of the wafer 9 into consideration. A potential contrast image is acquired to detect defects, in a state of enhancing an electric resistance difference between a normal part and a defective part sufficiently, taking advantage of the electric charges induced by irradiation with an electron beam.</p> |
