发明名称 LIQUID ZONE EPITAXY PROCESS
摘要 <p>The invention comprises a process for the production of a layer which is epitaxially grown on a surface of a substrate, in which the material which is to be epitaxially grown is brought into contact with the surface of the substrate, and in which at a high temperature some of the material at the surface of the substrate is dissolved in a melt and in the liquid phase the melt forms a surface contact with the surface of the substrate, and in which the material of the melt is compelled to assume the form of a thin layer on the surface of the substrate by means of a body whose material at the surface with which the body contacts the liquid phase is inert in relation to the material of the liquid phase.</p>
申请公布号 CA1004962(A) 申请公布日期 1977.02.08
申请号 CA19730182057 申请日期 1973.09.27
申请人 SIEMENS AKTIENGESELLSCHAFT 发明人 WEYRICH, CLAUS;WINSTEL, GUENTER
分类号 C30B19/00;C30B19/10;C30B19/12;H01L21/208 主分类号 C30B19/00
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