发明名称 |
LIQUID ZONE EPITAXY PROCESS |
摘要 |
<p>The invention comprises a process for the production of a layer which is epitaxially grown on a surface of a substrate, in which the material which is to be epitaxially grown is brought into contact with the surface of the substrate, and in which at a high temperature some of the material at the surface of the substrate is dissolved in a melt and in the liquid phase the melt forms a surface contact with the surface of the substrate, and in which the material of the melt is compelled to assume the form of a thin layer on the surface of the substrate by means of a body whose material at the surface with which the body contacts the liquid phase is inert in relation to the material of the liquid phase.</p> |
申请公布号 |
CA1004962(A) |
申请公布日期 |
1977.02.08 |
申请号 |
CA19730182057 |
申请日期 |
1973.09.27 |
申请人 |
SIEMENS AKTIENGESELLSCHAFT |
发明人 |
WEYRICH, CLAUS;WINSTEL, GUENTER |
分类号 |
C30B19/00;C30B19/10;C30B19/12;H01L21/208 |
主分类号 |
C30B19/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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