| 摘要 |
<p>The invention concerns an integrated circuit semiconductor substrate comprising at least a dielectrically vertical buried trench and having a height at least five times more than its width, and an epitaxial semiconductor layer (6) covering said trench laterally separating two regions (4, 5). The invention is applicable to MOS, CMOS and BICMOS technologies. The invention also concerns a method for making said substrate.</p> |
