| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a field emitter based on a carbon nano-tube capable of improving operation of a field emission display device. SOLUTION: The carbon nano-tube 10 is covered with a high-hardness semiconductor layer or insulation layer 12. The semiconductor layer or insulation layer 12 is doped as an n-type, and has a thickness within several nanometers (nm) and excellent stability against collision from an external atom or particle (normally anion). A kind of compound of B, C and N including BN, GaN, Si3N4, TiC, B4C and the like, some kinds of oxides including TiO2, Al2O3, MgO and the like and some dielectrics including SrTiO3 and the like can be used for it, and diamond-like carbon(DLC) or diamond particles can be used as well.</p> |
