| 发明名称 |
METHOD OF REMOVING POLYMER COATING FROM AN ETCHED TRENCH |
| 摘要 |
A method of removing a polymeric coating from sidewalls of an etched trench defined in a silicon wafer is provided. The method comprises etching the wafer in a biased plasma etching chamber using an O2 plasma. The chamber temperature is in the range of 90 to 180 °C.
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| 申请公布号 |
KR20070088584(A) |
申请公布日期 |
2007.08.29 |
| 申请号 |
KR20077007838 |
申请日期 |
2007.04.05 |
| 申请人 |
SILVERBROOK RESEARCH PTY. LTD. |
发明人 |
MCREYNOLDS DARRELL LA RUE;SILVERBROOK KIA |
| 分类号 |
H01L21/3065;H01L27/00 |
主分类号 |
H01L21/3065 |
| 代理机构 |
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