发明名称 SUBSTRATE TREATMENT DEVICE
摘要 The invention relates to a device and to a method for treating substrates, comprising a heating apparatus having a plurality of zone heating apparatuses and comprising a control apparatus, the reference variable of which is a susceptor temperature (TS) and the controlled variable of which is an actual temperature of the susceptor (7) measured by means of a temperature-measuring apparatus (10) and the manipulated variable of which is a value for the heating power (Ptot) fed into the heating apparatus. A heating power distributor (12) is provided, which receives the manipulated variable (Ptot) as an input variable and which provides a zone heating power (P1, P2, P3, P4, P5) for each of the zone heating apparatuses (1, 2, 3, 4, 5) as output variables, wherein the sum of the values of the zone heating powers (P1, P2, P3, P4, P5) corresponds to the manipulated variable (Ptot) and the values of the zone heating powers (P1, P2, P3, P4, P5) have a specified fixed ratio among each other. In order to specify a robust control loop by means of which a device having a plurality of zone heating apparatuses can be adapted to changing process parameters, the specified ratios according to the invention are defined by distribution parameters (A, B, C, D) that can be preselected, wherein at least one distribution parameter (A, C) is a quotient of two values of zone heating powers (P1, P2; P4, P5).
申请公布号 US2016204008(A1) 申请公布日期 2016.07.14
申请号 US201414913229 申请日期 2014.08.04
申请人 AIXTRON SE 发明人 BRIEN Daniel
分类号 H01L21/67;C23C16/52;H01L21/687;H05B6/06;H05B6/10;C23C16/46;H05B1/02 主分类号 H01L21/67
代理机构 代理人
主权项 1. A device for treating substrates, comprising a susceptor (7) which is disposed in a process chamber (6) and has a first side (7′) that faces towards the process chamber (6) for accommodating at least one substrate (15) and a second side (7″) that faces away therefrom and can be heated by a heating apparatus having a plurality of zone heating apparatuses, and comprising a control apparatus, the reference variable of which is a susceptor temperature (TS), the control variable of which is an actual temperature of the susceptor (7) measured by means of a temperature measuring apparatus (10), and the manipulated variable of which is a value for the total heating power (Ptot) fed into the heating apparatus, characterized by a heating power distributor (12) which receives only the manipulated variable (Ptot) as an input variable and which provides a zone heating power (P1, P2, P3, P4, P5) for each of the zone heating apparatuses (1, 2, 3, 4, 5) as output variables, wherein the sum of the values of the zone heating powers (P1, P2, P3, P4, P5) corresponds to the manipulated variable (Ptot) and the values of the zone heating powers (P1, P2, P3, P4, P5) have a fixed ratio with respect to one another, characterized in that the specified ratios can be changed by preselectable distribution parameters (A, B, C, D).
地址 Herzogenrath DE