| 摘要 |
<p>PURPOSE:To simplify the rear surface treatment of a semiconductor wafer and prevent an abnormal etching from occurring by providing the semiconductor wafer which is thicker than a specified thickness, by forming a groove which is nearly the same depth as a specified thickness from the surface of the wafer, and by abrading the wafer so that it becomes a specified thickness from the rear surface. CONSTITUTION:A semiconductor wafer 1 which is thicker than a specified thickness is prepared and a groove 3 with nearly the same depth as the above specified thickness from the surface of the semiconductor wafer 1 is formed between regions where the semiconductor wafer 1 is separated. Then, a protection resist 6 is applied onto the surface of the semiconductor wafer 1 including the inner surface of the above groove 3, the semiconductor wafer 1 coated with the protection resist 6 is applied to a supporting body 4, and the semiconductor wafer 1 which is applied to the supporting body 4 is abraded to the above specified thickness from the rear surface, thus enabling the protection resist 6 which is applied to the bottom of the groove 3 to be exposed. Then, after metal layers 7 and 8 which are separated by the exposed protection resist 6 are formed on the rear surface of the semiconductor wafer 1, the supporting body 4 and the protection resist 6 are eliminated, thus enabling the semiconductor wafer 1 to be separated into a plurality of pieces.</p> |
