SEMICONDUCTOR STORAGE DEVICE AND REDUNDANT MEMORY REPAIR METHOD

摘要

PURPOSE:To attain a high speed and also a large storage capacity by disposing peripheral circuits in cross areas formed of a longitudinal central part and a lateral central part and by disposing memory arrays in four regions divided by the cross areas. CONSTITUTION:In a semiconductor chip or in each of areas divided by the longitudinal center line thereof, peripheral circuits are disposed in cross areas A to E formed of the longitudinal central part and the lateral central part thereof, while memory arrays M are disposed in four regions divided by the cross areas A to E. As the peripheral circuits are disposed in the central parts of the chip or in each of the areas according to this constitution, the maximum transmission path of signals can be shortened to the half of a chip size substantially, and therefore DRAM designed to have a large storage capacity can be made to operate at a high speed.