| 摘要 |
PURPOSE:To obtain an oxide semiconductor layer having the stable characteristics over the large area by using metal oxide particles whose average particle diameters is 1,000Angstrom or less as raw material particles constituting the oxide semiconductor layer, and forming the oxide semiconductor layer by a coating application method. CONSTITUTION:On a substrate 101, an oxide semiconductor layer 102, photovoltaic power generation layers 103-105, a transparent conductor layer 106 and a metal oxide electrode 107 are laminated in this order. At this time, as material particles for forming the oxide semiconductor layer 102, metal oxide particles whose average particle diameter is 1,000Angstrom or less are used, and the oxide semiconductor layer 102 is formed by a coating application method. In this way, a thin film solar cell characterized by high photoelectric conversion efficiency, less current leakage and stable characteristics over the large area can be obtained. |
