Method of producing semiconductor device having buried contact structure.

摘要

Disclosed herein is a method of producing a semiconductor device which includes the steps of forming a hole in an insulating film covering a semiconductor substrate, forming a titanium nitride layer on surfaces of the hole and the insulating film, depositing tungsten on the titanium nitride layer with filling the hole to thereby form a blanket tungsten layer, etching back the blanket tungsten layer by a plasma gas including fluorine until the titanium nitride layer is exposed to thereby form a tungsten plug filling the hole, cleaning the titanium nitride layer to remove fluorine adhering to and remaining on the titanium nitride layer, and forming an aluminum layer on the cleaned titanium layer and the tungsten plug.