| 摘要 |
<p>PURPOSE:To reduce the number of data storage elements by storing a charge quantity based on ternary external input data in one storage element of a storage means and setting the element in one of three storage states. CONSTITUTION:At the time of writing data, a specified level quantity M based on ternary external input data Din is stored in one storage element of the storage means 13, which is designated based on an element selection signal ADR and one storage element is set to one of three storage states based on ternary external input data Din. At the time of reading data, a control means 11 and an output value judgement means 14 judge the storage state of one storage element of the storage means 13, which is designated based on the element selection signal ADR and a judgement result is outputted as ternary external output data Dout based on a read selection signal LA. Consequently, the memory capacity of the ternary storage device can be expanded to 3<n>. Thus, the number of the data storage elements can be reduced.</p> |
