SEMICONDUCTOR DEVICE AND METHODS OF FABRICATING THE SAME

摘要

A semiconductor device and a method for manufacturing the same are provided to acquire enhanced electrical properties from an MOSFET structure by obtaining optimum work functions from gate electrodes of NMOSFET and PMOSFET and preventing a depletion region from being at a polycrystalline silicon electrode using a metallic residue and a polycrystalline silicon layer on the metallic residue. A gate insulating layer is formed on a semiconductor substrate(S10). A metal film is formed on the gate insulating layer(S20). The metal film is selectively etched to leave a metallic residue at an interface between the metal film and the gate insulating layer(S40). A polycrystalline silicon layer is formed on the gate insulating layer including the metallic residue(S50).