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发明名称
半导体晶片之制造方法及半导体晶片
摘要
藉由在一半导体晶圆的第二表面上执行电浆蚀刻,在该半导体晶圆的第一表面上,一绝缘薄膜被放置于划分的区域并在该半导体晶圆的第二表面上,一用以定义该等划分区域的遮罩被放置,该第二表面系位在相反于该第一表面,该绝缘薄膜系藉由除去对应该等划分区域的部分而暴露自一蚀刻底部。接着,藉由在该暴露的绝缘薄膜随着由于电浆中的离子之电荷被表面充电的状态下连续地执行该电浆蚀刻,在该等装置形成区域中处于与该绝缘薄膜接触的角落部分被除去。结果,具有一高横向破裂的个别半导体晶片被制造。
申请公布号
TW200633037
申请公布日期
2006.09.16
申请号
TW095102464
申请日期
2006.01.23
申请人
松下电器产业股份有限公司
发明人
有田洁
分类号
H01L21/301;H01L21/3065
主分类号
H01L21/301
代理机构
代理人
恽轶群;陈文郎
主权项
地址
日本
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