| 摘要 |
PURPOSE:To form good patterns without deteriorating the characteristics of the polyimide by irradiating the parts exclusive of the accumulated films of polyimide with energy rays to cut Si-Si bonds and dissolving the cut parts with a developing soln. CONSTITUTION:A polyimide precursor having the Si-Si bonds is formed and the accumulated films of the polyimide are formed by an imidization treatment. The accumulated films of the polyimide are then irradiated with the energy rays and are thereby formed with desired patterns. Since the accumulated films of the polyimide function as a positive type resist, the energy of the energy rays with which the films are irradiated is adjusted to a sufficient intensity at the time of the irradiation of the parts desired to be removed as the patterns to cut the Si-Si bonds of the polyimide constituting the accumulated films. Further, the accumulated films are developed by the developing soln. The parts of the accumulated films of the polyimide where the Si-Si bonds are cut are then dissolved and the positive patterns are formed. The fine patterns are formed in this way on the polyimide films without deteriorating the characteristics thereof. |
