| 摘要 |
1,182,325. Semi-conductor devices. PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd. 16 May, 1967 [19 May, 1966], No. 22691/67. Heading H1K. One group of parallel conductors in a semiconductor device matrix comprises metal strips H 1 , H 2 &c. applied to an insulating layer on the semi-conductor body carrying the matrix, while the second group V 1 , V 2 &c. crossing the first comprises continuous surface zones 4 of one conductivity type surrounded in the body by zones of the opposite conductivity type. Circuit elements, e.g. transistors such as T 21 are connected to both conductors, e.g. V 1 , H 2 , at certain of the crossing points. Each conductor of the second group, e.g. V 1 , may comprise a single P-type surface strip in an N-type silicon body, the junction between the strip and body being reverse biased. Alternatively the conductor V 1 may, as shown, comprise an N-type strip 4 surrounded by a P-type strip 5, either of the two junctions so formed being reverse biased, and the other junction being shorted. Metal strips 11 may be provided on each strip 4 between the crossing points, to enhance conductivity and to provide a means of contact to the transistor base region. The emitter region is connected to the metal strip H 2 by a conducting branch. The strips 4, 5 may be diffused simultaneously with the emitter and base region of the transistors T 21 &c., boron and phosphorus being used as the P- and N-type dopants, respectively. The collector regions of all the transistors may be constituted by the bulk of the semi-conductor body. A photo-resist etching technique may be used to define the diffusion apertures in the insulating layer, e.g. of silica. The strips H 1 , H 2 , 11 and branch conductors may be of vapour deposited aluminium. As an alternative to diffusion, the conducting strips 4 of the group V 1 , V 2 &c. may be formed in an epitaxially grown layer. The circuit elements may also be diodes, resistors or complete arrangements of components such as flip-flop circuits &c. |
