| 摘要 |
1293915 Semiconductor devices GENERAL ELECTRIC CO 16 Dec 1969 [23 Dec 1968] 61314/69 Addition to 1191887 Heading H1K Explosive blow-out of the housing of a semiconductor rectifier 11 in the event of arcing due to current overload is prevented by a rigid ring 56 or 57 surrounding an elastic O-ring 54 or 55 held in compression between one end of the housing and a metal member 20 or 21 in contact with a main rectifier electrode 13 or 14. The rigid ring 56, 57 may, as shown, be a separate structure located laterally by flanges 56a, 57a. Alternatively it may comprise an integral part (21a), Fig. 3 (not shown), of the corresponding metal member (21), or a flange (64) Fig. 4 (not shown), of a thin metal diaphragm connecting the electrode (60) to the wall (30) of the housing. The housing is constituted by the two electrodes 13, 14, Fig. 1, and an insulating sleeve 19, e.g. of ceramic, to the ends of which outer flanges 15, 16 of the electrodes 13, 14 are brazed. The electrodes 13, 14 are themselves-made of Niplated Cu or W, and the metal members 20, 21 are of Al, brass or Cu. A "strain buffer" 22 of W may also be situated between one electrode 14 and the corresponding metal member 21. The device shown is a Si thyristor 12 having a gate lead 23 connected to an annular metal terminal 32, 33 linking two aligned parts 30, 31 of the ceramic sleeve 19. A part 26a of the cylindrical diaphragm 26 linking the electrode 14 to the outer flange 16 is indented to accommodate the gate lead. The device may alternatively be a diode. A shield of glass-filled P.T.F.E. (not shown), may also be provided within the housing to protect the inside of the ceramic sleeve 19 against arcing. |
