| 摘要 |
<p>PURPOSE:To reduce frequency in exposure work by providing on a photomask a minute pattern other than an essentially objective pattern for the use of optical diffraction and interference. CONSTITUTION:The section of the resist pattern of a positive resist 103 exposed by an essential pattern 101 of the photomask used in an exposure device and a minute pattern 102 of resolution limit or lower has a gentle form in a face A-A' and has an angular form in a face B-B'. With respect to introduction of impurities, the depth of a diffusion layer 302 is controlled or the thickness is changed by half exposure of a resist 301 to easily obtain two kinds of diffusion layer 302 with a good positional precision by one exposure and impurity introduction. Thus, the three-dimensional structure of the resist is freely generated by one exposure work to reduce the frequency in exposure work.</p> |
