Integrated CMOS circuit production

摘要

The integrated CMOS circuit production method involves (a) forming respective first and second active regions (31, 32), gate dielectrics (41, 42) and gate electrodes (51, 52) for complementary first and second MOS transistors; (b) producing a mask (7) which covers the second active region (32) but not the first active region (31); and (c) forming first source/drain regions (81) for the first MOS transistor by a first implantation at an energy such that the mask (7) protects the second active region (32). The novelty is that second source/drain regions (82) of the second MOS transistor are formed by a second implantation at an energy such that the implantation ions pass through the mask (7) into the second active region (32) and pass through the first gate electrode, first gate oxide and first source/drain regions without altering their doping. Preferably, the mask (7) consists of 0.5-5 mu thick SiO2, photolacquer, Si3N4 or spin-on glass, the first implantation is carried out with As at 5-100 keV or P at 10-100keV and the second implantation is carried out with B at 5-100 keV.