| 摘要 |
<p>A semiconductor memory device and a method for manufacturing the same are provided to memorize data according to the amount of holes accumulated in a body region. A first and second semiconductor layers face each other. A back gate insulating layer is formed between the first and second semiconductor layers. A first conductive type plate is formed in the first semiconductor layer. A gate insulating layer is formed on a surface of the semiconductor layer. A gate electrode comes in contact with the gate insulating layer. A first conductive type body region is formed at an opposing region between the gate electrode and the gate insulating layer in the second semiconductor layer. A second conductive type source and drain layers are formed at both sides of the body region within the second semiconductor layer. A second conductive type diffusion layer(11) is formed on in a surface region of the first semiconductor layer. The body region is in an electrically floating state and memorizes data by accumulating or discharging electric charges.</p> |
