发明名称 |
Mounting substrate and light-emitting device using the same |
摘要 |
To provide a mounting substrate wherein insulation resistance of a metal substrate having an oxide film formed on the surface thereof is ensured, and light reflectance is improved by preventing a light-reflecting material contained in a reflection layer from diffusing into a surface of the metal substrate.;A mounting substrate includes a metal substrate (21), and a surface layer section (22) formed on an upper surface of the metal substrate (21). The surface layer section (22) includes an oxide film layer (23) formed on a surface of the metal substrate (21), a barrier layer (24) formed on the oxide film layer (23), a reflection layer (25) formed on the barrier layer (24) and containing a light-reflecting material, and a protection film layer (26) formed on the reflection layer (25). |
申请公布号 |
US9368707(B2) |
申请公布日期 |
2016.06.14 |
申请号 |
US201314647161 |
申请日期 |
2013.03.14 |
申请人 |
CITIZEN ELECTRONICS CO., LTD.;CITIZEN HOLDINGS CO., LTD. |
发明人 |
Imai Sadato |
分类号 |
H01L33/62;H01L23/14;H01L33/56;H01L33/60;H01L23/373;H01L21/48;H01L33/46;H01L33/44;H01L25/075 |
主分类号 |
H01L33/62 |
代理机构 |
Wenderoth, Lind & Ponack, L.L.P. |
代理人 |
Wenderoth, Lind & Ponack, L.L.P. |
主权项 |
1. A mounting substrate comprising:
a metal substrate formed of an aluminum plate; and a surface layer section formed on an upper surface of the metal substrate, wherein the surface layer section includes:
an oxide film layer comprising an alumite layer, the oxide film layer being formed on the upper surface of the metal substrate;a barrier layer formed on the oxide film layer and containing at least one of titanium, nickel, ruthenium, palladium, tungsten, and platinum;a reflection layer formed on the barrier layer and containing a light-reflecting material formed of silver; andan insulating protection film layer formed on the reflection layer, and wherein the insulating protection film layer is formed of a multilayer film including a light-transmitting resin film, a titanium oxide evaporated film, and a silicon oxide evaporated film. |
地址 |
Yamanashi-Ken JP |