| 发明名称 |
SEMICONDUCTOR DEVICE |
| 摘要 |
A semiconductor device includes a first metal wiring formed on a semiconductor substrate, a first organic insulating film formed on the first metal wiring, and a second metal wiring formed to cover the first organic insulating film and having a via connected to the first metal wiring. The semiconductor device further includes a second organic insulating film formed on the first organic insulating film and having an opening to expose the second metal wiring, a bump formed on an exposed portion of the second metal wiring in the opening, and a tunnel portion formed in contact with the second metal wiring or the first organic insulating film. The tunnel portion overlaps with the second metal wiring in planar view. |
| 申请公布号 |
US2016218073(A1) |
申请公布日期 |
2016.07.28 |
| 申请号 |
US201615088265 |
申请日期 |
2016.04.01 |
| 申请人 |
Panasonic Intellectual Property Management Co., Ltd. |
发明人 |
YOSHIOKA YOSHIMASA |
| 分类号 |
H01L23/00 |
主分类号 |
H01L23/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a semiconductor substrate; a first wiring formed on the semiconductor substrate; a first organic insulating film formed to cover the first wiring; a second wiring formed on the first organic insulating film and having a connection portion connected to the first wiring; a second organic insulating film formed on the first organic insulating film to cover the second wiring and having an opening to expose the second wiring; a bump formed on an exposed portion of the second wring in the opening; and a tunnel portion formed in contact with the second wiring or the first organic insulating film, wherein the tunnel portion overlaps with the second wiring in planar view. |
| 地址 |
Osaka JP |
