Halbleiterbauclement mit einem Schutzueberzug und Verfahren zu seiner Herstellung

摘要

1,108,715. Coated semi-conductor device. WESTINGHOUSE ELECTRIC CORPORATION. 22 Aug., 1966 [13 Sept., 1965], No. 37487/66. Heading H1K. A semi-conductor device comprising a body of semi-conductor material having at least one PN junction therein which is exposed at a surface, is coated with a mono-molecular layer of the reaction product of a halogenated organic silane, hydroxyl ions and the semi-conductor material and a second layer of perfluorocarbons or rubbers vulcanizing at room temperature, i.e. without heating. A silicon body having a PN junction 22 is exposed to water vapour, immersed in a solution of (C 6 H 5 ) 2 SiCl 2 in xylene, p.cymene or n-decane at 90‹ to 130‹ C. to give a first layer 24, washed with acetone, heated in a vacuum and then coated, 26, with a copolymer of dimethyl polysiloxane and methyl hydrogen polysiloxane which is cured at room temperature in 24 hrs. by lead octoate. Ge, SiC, AIIIBV and AIIBIV semi-conductor materials may be treated too.