| 摘要 |
<p>PURPOSE:To obtain a production process so as to reduce effect of a step of a lower pattern by forming a cut at a point crossing a pattern on a mask in such a manner as to expand more on the pattern toward the inner part thereof. CONSTITUTION:In a method of forming an insulation layer pattern to form a high polymer pattern on a lower pattern having a thickness provided on a substrate using a light source and a mask for exposure in such a manner as to cross the pattern, a cut is formed at a point crossing the pattern on the mask so as to expand more toward the inner part of the pattern thereon. When this insulation pattern 2 is made up of a positive photoresist, a cut 41 is provided at a part shielding light and an angle theta1 of the cut 41 is acute. This enables the obtaining of such a production process as to reduce effect of a step of the lower pattern.</p> |
