| 摘要 |
In a test apparatus, a processor determines an area in a circuit area of a semiconductor device indicated by design data, on the basis of attenuation characteristics of a pulse signal caused by electrostatic discharge. The attenuation characteristics of the pulse signal are dependent on a frequency of the pulse signal and a distance from an input point of the pulse signal. The processor extracts a resistor, a capacitor, or an inductor from the determined area, and creates an equivalent circuit of the semiconductor device within the area on the basis of a result of the extraction. |
| 主权项 |
1. A test method for testing an impact of electrostatic discharge on a semiconductor device, the method comprising:
determining, by a processor, a first area in a circuit area of the semiconductor device indicated by design data, based on attenuation characteristics of a pulse signal caused by the electrostatic discharge, the attenuation characteristics of the pulse signal being dependent on a frequency of the pulse signal and a distance from an input point of the pulse signal; extracting, by the processor, a resistor, a capacitor, or an inductor, or any combination thereof from the determined first area; and creating, by the processor, an equivalent circuit of the semiconductor device within the first area, based on a result of the extracting. |
