| 摘要 |
PURPOSE:To obtain a negative resist high in sensitivity to ionizing radiation and in dry etching resistance and capable of liquid development and dry development using plasma, by employing a polymer or copolymer having specified recurring structural units. CONSTITUTION:A resist image having superior dry etchability is obtained by dissolving a polymer or copolymer having recurring units represented by the general formula (A) or (B) (X1-X4 are each halogen or H, and R1-R12 are each H, alkyl, halogen, or halogenated alkyl), having >=30% units of the total recurring units, and halogen atoms by 15-80% of the substtuents X1-X4 of the polymer or the copolymer, in trochloroethane, coating a silicon wafer having a heat-oxidized layer on the surface with this obtained soln., exposing it patternwise using ionizing radiation, such as far UV rays or electron beams, and developing it to remove the unexposed parts. |
