| 摘要 |
PURPOSE:To obtain the titled semiconductor laser with sufficiently minor fluctuation of water lengths at the time of modulation of the semiconductor laser according to an applied current by a method wherein the resonator of the laser is composed of a refractive index correcting element provided with the end surface thereof on the one side opposing to the incident beam- outgoing end surface on the one side of a semiconductor laser element, the end surface on the other side of this semiconductor laser and the end surface on the other side of the refractive index correcting element. CONSTITUTION:A photo semiconductor pellet 1 and a refrative index correcting element 10 are arranged facing each other with a second end surface 8 and a third end surface 14 which are neiboring each other, an active layer 4 and a guidewave path layer 34 positioned to each other so as to be coupled optically are fixed on a fixed stand 18, and a laser resonator 19 is composed of a first end surface 7 and a fourth end surface 16. To the photosemiconductor pellet 1 is applied a first signal current 38 at the base band zone from a first driver 20 for modulating the strength of laser output 22. On the other hand, to the refractive index correcting element 10 is applied a second signal current 39 having a relation to complement each other with the first signal current 38 at the modulation degree through a second driver 24. According to such a method, the optical length between the laser resonators is kept at a constant value, because the variation of the refractive index of the active layer 4 can be negated with the refractive index variation of the waveguide path layer 34. |
