| 摘要 |
PURPOSE:To prevent the temperature rise of a substance substrate to be etched, and to obviate the roughening of an etching surface, the undercut of an etching shape, the deterioration in selectivity with a mask material, etc. by lowering the temperature of cooling water in an electrode within a predetermined range. CONSTITUTION:In a parallel plate type dry etching device, single crystal silicon or polycrystalline silicon as substances to be etched 4 is arranged closely on a target electrode 2 in a vacuum chamber 1. When a substance such as silicon tetrachloride is blown off from a gas blow-off pipe 5 is turned ON, plasma is generated between a counter electrode 7 and the target electrode 2 in which discharge intervals are determined, and etching progresses. Cooling water 9 is circulated into the target electrode 2 by a refrigerating circulator 8 in order to prevent the temperature rise of a substrate composed of the substance to be etched 4. An excellent value can be acquired within the range of the temperature of cooling water of 0--20 deg.C at the selection ratio of silicon as the substance to be etched to an silicon oxide film as a mask material.
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