| 摘要 |
The semiconductor device comprises a gate electrode 112 formed over a semiconductor substrate 10 , a sidewall spacer 116 formed on the sidewall of the gate electrode 112 , a sidewall spacer 144 formed on the side wall of the gate electrode 112 with the sidewall spacer 116 formed on, and an oxide film 115 formed between the sidewall spacer 116 and the sidewall spacer 144 , and the semiconductor substrate 10 . The film thickness of the oxide film 115 between the sidewall spacer 144 and the semiconductor substrate 10 is thinner than the film thickness of the oxide film 115 between the sidewall spacer 116 and the semiconductor substrate 10.
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