发明名称 METHOD FOR FORMING PERPENDICULAR MAGNETIZATION MAGNETIC TUNNEL JUNCTION ELEMENT, AND DEVICE OF MANUFACTURING THE SAME
摘要 PROBLEM TO BE SOLVED: To enhance perpendicular magnetic anisotropic energy of a perpendicular magnetization MTJ element.SOLUTION: A method of forming a perpendicular magnetization tunnel junction element includes a step for forming a tunnel barrier layer on the first magnetic layer of an object to be processed, a step for cooling the object to be processed on which the tunnel barrier layer is formed, and after the cooling step, a step for forming a second magnetic layer on the tunnel barrier layer.SELECTED DRAWING: Figure 1
申请公布号 JP2016134510(A) 申请公布日期 2016.07.25
申请号 JP20150008528 申请日期 2015.01.20
申请人 TOKYO ELECTRON LTD 发明人 KITADA TORU;NAKAMURA TSURAHITO;GOMI ATSUSHI;FURUKAWA SHINJI;SUZUKI YUSUKE
分类号 H01L43/12;C23C14/34;C23C14/58;H01F10/16;H01F10/26;H01F41/18;H01L21/8246;H01L27/105;H01L43/08;H01L43/10 主分类号 H01L43/12
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