发明名称 |
METHOD FOR FORMING PERPENDICULAR MAGNETIZATION MAGNETIC TUNNEL JUNCTION ELEMENT, AND DEVICE OF MANUFACTURING THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To enhance perpendicular magnetic anisotropic energy of a perpendicular magnetization MTJ element.SOLUTION: A method of forming a perpendicular magnetization tunnel junction element includes a step for forming a tunnel barrier layer on the first magnetic layer of an object to be processed, a step for cooling the object to be processed on which the tunnel barrier layer is formed, and after the cooling step, a step for forming a second magnetic layer on the tunnel barrier layer.SELECTED DRAWING: Figure 1 |
申请公布号 |
JP2016134510(A) |
申请公布日期 |
2016.07.25 |
申请号 |
JP20150008528 |
申请日期 |
2015.01.20 |
申请人 |
TOKYO ELECTRON LTD |
发明人 |
KITADA TORU;NAKAMURA TSURAHITO;GOMI ATSUSHI;FURUKAWA SHINJI;SUZUKI YUSUKE |
分类号 |
H01L43/12;C23C14/34;C23C14/58;H01F10/16;H01F10/26;H01F41/18;H01L21/8246;H01L27/105;H01L43/08;H01L43/10 |
主分类号 |
H01L43/12 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|