Method and device for electron beam irradiation of lif monocrystals in order to manufacture passive laser switches with f2 colour centres.

摘要

The invention refers to a method and device for electron beam irradiation of LiF monocrystals in order to manufacture passive laser switches with F2 colour centres, which ensures the uniform irradiation of LiF monocrystals at a 20...30 Mrad/h output of the irradiation dose. At the 1.064 μm wavelength, after irradiation doses of 70...80 Mrad, the absorption factors reach 0.4...0.45 cm-1>. The crystals are prevented from overheating by cooling the air-tight sheath, into which the LiF monocrystals are introduced, with a thermostat-controlled water current at a temperature of 10...15 degrees C. The irradiation time is 2...3 hours.