发明名称 |
Semiconductor memory device of shared sense amplifier system |
摘要 |
In a semiconductor memory device including a bit line precharge/equalizing circuit, the control system of the bit line precharge/equalizing circuit is changed in the normal operation mode and in the test mode. In the test mode, the bit line precharge/equalizing circuit is temporarily turned ON when an internal activation signal becomes non-active and then the bit line precharge/equalizing circuit is turned OFF after the potentials of paired bit lines are completely equalized.
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申请公布号 |
US6343038(B1) |
申请公布日期 |
2002.01.29 |
申请号 |
US20000653264 |
申请日期 |
2000.08.31 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
MAKINO EIICHI;WATANABE YOHJI;KATO DAISUKE |
分类号 |
G11C11/401;G11C7/12;G11C11/409;G11C11/4094;G11C29/04;G11C29/14;H01L21/8242;H01L27/108;(IPC1-7):G11C7/00 |
主分类号 |
G11C11/401 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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