发明名称 Semiconductor memory device of shared sense amplifier system
摘要 In a semiconductor memory device including a bit line precharge/equalizing circuit, the control system of the bit line precharge/equalizing circuit is changed in the normal operation mode and in the test mode. In the test mode, the bit line precharge/equalizing circuit is temporarily turned ON when an internal activation signal becomes non-active and then the bit line precharge/equalizing circuit is turned OFF after the potentials of paired bit lines are completely equalized.
申请公布号 US6343038(B1) 申请公布日期 2002.01.29
申请号 US20000653264 申请日期 2000.08.31
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 MAKINO EIICHI;WATANABE YOHJI;KATO DAISUKE
分类号 G11C11/401;G11C7/12;G11C11/409;G11C11/4094;G11C29/04;G11C29/14;H01L21/8242;H01L27/108;(IPC1-7):G11C7/00 主分类号 G11C11/401
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