SUBSTRATE ETCHING APPARATUS USING REMOTE PLASMA, AND SUBSTRATE ETCHING METHOD USING THE SAME

摘要

A substrate etching device using remote plasma and a method for etching the substrate are provided to improve the uniformity of the etching gas inside the substrate etching device by distributing the etching gas activated outside a chamber to an inner part of the chamber through a gas distributing plate. A substrate platform(130) is installed inside a chamber(110) forming a reaction space. A gas distributing plate(140) is installed in a substrate holding stand. The gas distribution plate is separately combined in the lower part of a chamber lid(120). A remote plasma generator(160) is installed outside the chamber. A first gas supply pipe(150) is connected between the remote plasma generator and the chamber lid. An RF power source(170) to supply the RF power is connected to the remote plasma generator. A second gas supply pipe(152) is connected to the first gas supply pipe.