发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device suitable for high reliability and a high-speed operation.SOLUTION: A semiconductor device includes a first conductor, a first insulator, a second insulator, a semiconductor and an electron capture layer, in which the semiconductor has a channel formation region; the first conductor has a region which overlaps the channel formation region via the first insulator; the second insulator is arranged to have a region which contacts a lateral face of the first conductor; and the electron capture layer is arranged to face the first conductor via the second insulator.SELECTED DRAWING: Figure 5 |
申请公布号 |
JP2016127284(A) |
申请公布日期 |
2016.07.11 |
申请号 |
JP20150250739 |
申请日期 |
2015.12.23 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
TANAKA TETSUHIRO;MATSUBAYASHI DAISUKE;TANEMURA KAZUYUKI |
分类号 |
H01L21/336;H01L21/8234;H01L21/8242;H01L27/06;H01L27/08;H01L27/088;H01L27/108;H01L29/786;H01L51/50 |
主分类号 |
H01L21/336 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|