发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device suitable for high reliability and a high-speed operation.SOLUTION: A semiconductor device includes a first conductor, a first insulator, a second insulator, a semiconductor and an electron capture layer, in which the semiconductor has a channel formation region; the first conductor has a region which overlaps the channel formation region via the first insulator; the second insulator is arranged to have a region which contacts a lateral face of the first conductor; and the electron capture layer is arranged to face the first conductor via the second insulator.SELECTED DRAWING: Figure 5
申请公布号 JP2016127284(A) 申请公布日期 2016.07.11
申请号 JP20150250739 申请日期 2015.12.23
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 TANAKA TETSUHIRO;MATSUBAYASHI DAISUKE;TANEMURA KAZUYUKI
分类号 H01L21/336;H01L21/8234;H01L21/8242;H01L27/06;H01L27/08;H01L27/088;H01L27/108;H01L29/786;H01L51/50 主分类号 H01L21/336
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