| 发明名称 |
Hochfrequenzhalbleitervorrichtung |
| 摘要 |
This invention relates to a high-frequency semiconductor device wherein the internal built-in electric field distribution in a semiconductor is made to have two peak values under a DC bias condition and an avalanche multiplication effect in the semiconductor is used to obtain a high-efficiency oscillation in a high-frequency region. |
| 申请公布号 |
DE1947637(A1) |
申请公布日期 |
1970.03.26 |
| 申请号 |
DE19691947637 |
申请日期 |
1969.09.19 |
| 申请人 |
NIPPON TELEGRAPH AND TELEPHONE PUBLIC CORP. |
发明人 |
MIZUSHIMA,YOSHIHIKO;KAWARADA,KUNIYASU |
| 分类号 |
H01L29/00;H01L29/06;H01L29/10;H01L29/74;H01L29/86 |
主分类号 |
H01L29/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
